Inno-Trust Tech Co., Ltd., - inno-trust, wafer, Aluminum Wafer, Oxide wafer, Glass wafer, β-SiC, Spherical Aluminium Oxide, HBN, Sapphire.

Advantage of our products:
1. Metal film Wafers, such as Al, Ni, Ag, Au, Ti, Pt, wafers, platted with 99.99% + or 99.995% +, plasma. 2. 100% pass peeling test before delivery. No peeling problem.
Application:
1. Packaging test. 2. Lapping test. 3. Cutting test.
4. Wafer mounting test. 5. Wire bonding test.
6.Quality control of the machine / Setting of parameter test.
7. Special experiment/ proofing
8. Dummy IC/chips producing

6” 8” 12” Aluminum wafer

6”Aluminum wafer

Thickness (µ m)	≧500
TTV (µ m)	≦50um
WARP (µ m)	≦50um
Metallization Thinkness	1000~10000A± 10%

8”Aluminum wafer

Thickness (µ m)	≧600
WARP (µ m)	≦50um
TTV (µ m)	≦50um
Metallization Thinkness	1000~10000A± 10%

12”Aluminum wafer

Thickness (µ m)	≧650
WARP (µ m)	≦50um
TTV (µ m)	≦50um
Metallization Thinkness	1000~10000A± 10%

Thermal Oxide wafer
Application：
1. Etch rate test. 2. Metal bonding test
3. Electric insulation layer

6” & 8” & 12” Thermal Oxide Wafer

6”Thermal Oxide Wafer

Thickness (µ m)	675 ± 25 um
Type	P
Orientation	<100>
Res.;	1 ~ 100 ohm-cm
TTV (µ m)	≦50um
WARP (µ m)	≦50um
Metallization Thinkness	1000~10000A± 10%

8”Thermal Oxide Wafer

Thickness (µ m)	725 ± 25 um
Type	P
Orientation	<100>
Res.;	1 ~ 100 ohm-cm
TTV (µ m)	≦50um
WARP (µ m)	≦50um
Metallization Thinkness	1000~10000A± 10%

12” Thermal Oxide Wafer

Thickness (µ m)	775 ± 25 um
Type	P
Orientation	<100>
Res.;	1 ~ 100 ohm-cm
TTV (µ m)	≦50um
WARP (µ m)	≦50um
Metallization Thinkness	1000~10000A± 10%

Thinning wafer

Extra flat/ Extra thin/ Thinning service